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AUIRFP2602 PDF预览

AUIRFP2602

更新时间: 2024-11-18 14:40:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 214K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

AUIRFP2602 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.71雪崩能效等级(Eas):400 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:24 V最大漏极电流 (Abs) (ID):180 A
最大漏极电流 (ID):180 A最大漏源导通电阻:0.0016 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):380 W最大脉冲漏极电流 (IDM):1580 A
参考标准:AEC-Q101子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AUIRFP2602 数据手册

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PD - 96420  
AUTOMOTIVE GRADE  
AUIRFP2602  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
LowOn-Resistance  
D
V(BR)DSS  
24V  
RDS(on) typ.  
1.25m  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
Ω
max. 1.6m  
Ω
G
ID (Silicon Limited) 380A  
S
ID (Package Limited) 180A  
Description  
Specifically designed for Automotive applications,  
D
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of  
this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features combine  
to make this design an extremely efficient and  
reliable device for use in Automotive applications  
and a wide variety of other applications.  
S
D
G
TO-247AD  
G
G a te  
D
S
D ra in  
S o u rce  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
devicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillair  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
380  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
270  
A
180  
1580  
IDM  
Power Dissipation  
380  
PD @TC = 25°C  
W
W/°C  
V
Linear Derating Factor  
2.5  
Gate-to-Source Voltage  
± 20  
VGS  
Single Pulse Avalanche Energy (Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
400  
1011  
EAS  
mJ  
EAS (Tested )  
See Fig.17a, 17b, 14, 15  
IAR  
A
Repetitive Avalanche Energy  
EAR  
TJ  
mJ  
Operating Junction and  
-55 to + 175  
Storage Temperature Range  
TSTG  
°C  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.40  
–––  
Units  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient (PCB Mount, steady state)  
Rθ  
Rθ  
Rθ  
JC  
CS  
JA  
0.24  
–––  
°C/W  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/17/11  

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