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AUIRFP2602

更新时间： 2024-02-26 15:37:29
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 214K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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AUIRFP2602 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.71雪崩能效等级（Eas）：400 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：24 V最大漏极电流 (Abs) (ID)：180 A
最大漏极电流 (ID)：180 A最大漏源导通电阻：0.0016 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：380 W最大脉冲漏极电流 (IDM)：1580 A
参考标准：AEC-Q101子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFP2602 数据手册

 浏览型号AUIRFP2602的Datasheet PDF文件第2页浏览型号AUIRFP2602的Datasheet PDF文件第3页浏览型号AUIRFP2602的Datasheet PDF文件第4页浏览型号AUIRFP2602的Datasheet PDF文件第5页浏览型号AUIRFP2602的Datasheet PDF文件第6页浏览型号AUIRFP2602的Datasheet PDF文件第7页 
PD - 96420  
AUTOMOTIVE GRADE  
AUIRFP2602  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
LowOn-Resistance  
D
V(BR)DSS  
24V  
RDS(on) typ.  
1.25m  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
Ω
max. 1.6m  
Ω
G
ID (Silicon Limited) 380A  
S
ID (Package Limited) 180A  
Description  
Specifically designed for Automotive applications,  
D
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of  
this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features combine  
to make this design an extremely efficient and  
reliable device for use in Automotive applications  
and a wide variety of other applications.  
S
D
G
TO-247AD  
G
G a te  
D
S
D ra in  
S o u rce  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
devicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillair  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
380  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
270  
A
180  
1580  
IDM  
Power Dissipation  
380  
PD @TC = 25°C  
W
W/°C  
V
Linear Derating Factor  
2.5  
Gate-to-Source Voltage  
± 20  
VGS  
Single Pulse Avalanche Energy (Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
400  
1011  
EAS  
mJ  
EAS (Tested )  
See Fig.17a, 17b, 14, 15  
IAR  
A
Repetitive Avalanche Energy  
EAR  
TJ  
mJ  
Operating Junction and  
-55 to + 175  
Storage Temperature Range  
TSTG  
°C  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.40  
–––  
Units  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient (PCB Mount, steady state)  
Rθ  
Rθ  
Rθ  
JC  
CS  
JA  
0.24  
–––  
°C/W  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/17/11  
1234567...10

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