是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.71 | 雪崩能效等级(Eas): | 400 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 24 V | 最大漏极电流 (Abs) (ID): | 180 A |
最大漏极电流 (ID): | 180 A | 最大漏源导通电阻: | 0.0016 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247AC |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 380 W | 最大脉冲漏极电流 (IDM): | 1580 A |
参考标准: | AEC-Q101 | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AUIRFP2907 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me | |
AUIRFP2907Z | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
AUIRFP4004 | INFINEON |
获取价格 |
Specifically designed for Automotive applications | |
AUIRFP4110 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, | |
AUIRFP4409 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
AUIRFP4568 | INFINEON |
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Power Field-Effect Transistor | |
AUIRFR024N | INFINEON |
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Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met | |
AUIRFR024NTR | INFINEON |
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Advanced Planar Technology | |
AUIRFR024NTRL | INFINEON |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met | |
AUIRFR024NTRR | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |