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AUIRFR1010Z PDF预览

AUIRFR1010Z

更新时间： 2024-01-03 12:23:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 247K
描述
Advanced Process Technology

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中文翻译

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AUIRFR1010Z 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-252AA
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.16Is Samacsys：N
雪崩能效等级（Eas）：110 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：91 A最大漏极电流 (ID)：42 A
最大漏源导通电阻：0.0075 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：140 W
最大脉冲漏极电流 (IDM)：360 A子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR1010Z 数据手册

 浏览型号AUIRFR1010Z的Datasheet PDF文件第2页浏览型号AUIRFR1010Z的Datasheet PDF文件第3页浏览型号AUIRFR1010Z的Datasheet PDF文件第4页浏览型号AUIRFR1010Z的Datasheet PDF文件第5页浏览型号AUIRFR1010Z的Datasheet PDF文件第6页浏览型号AUIRFR1010Z的Datasheet PDF文件第7页 
PD - 97683  
AUTOMOTIVE GRADE  
AUIRFR1010Z  
HEXFET® Power MOSFET  
Features  
D
VDSS  
55V  
●
●
●
●
●
●
●
Advanced Process Technology  
LowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
RDS(on) typ.  
5.8m  
7.5m  
91A  
42A  
Ω
Ω
max.  
ID (Silicon Limited)  
ID (Package Limited)  
G
S
Automotive Qualified *  
Description  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features com-  
bine to make this design an extremely efficient and  
reliable device for use in Automotive applications  
and a wide variety of other applications.  
D
S
G
D-Pak  
AUIRFR1010Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
91  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
65  
A
@ T = 25°C  
C
42  
360  
140  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.9  
± 20  
W/°C  
V
V
GS  
Single Pulse Avalanche Energy (Thermally limited)  
EAS  
110  
220  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
300  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.11  
40  
Units  
Junction-to-Case  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/16/11  
1234567...13

中文翻译

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AUIRFR1010Z 替代型号

型号 品牌 替代类型 描述 数据表
IRFR1010ZTRPBF INFINEON

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