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AUIRFR1010Z PDF预览

AUIRFR1010Z

更新时间： 2024-11-05 12:30:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 247K
描述
Advanced Process Technology

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中文翻译

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AUIRFR1010Z 数据手册

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PD - 97683  
AUTOMOTIVE GRADE  
AUIRFR1010Z  
HEXFET® Power MOSFET  
Features  
D
VDSS  
55V  
●
●
●
●
●
●
●
Advanced Process Technology  
LowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
RDS(on) typ.  
5.8m  
7.5m  
91A  
42A  
Ω
Ω
max.  
ID (Silicon Limited)  
ID (Package Limited)  
G
S
Automotive Qualified *  
Description  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features com-  
bine to make this design an extremely efficient and  
reliable device for use in Automotive applications  
and a wide variety of other applications.  
D
S
G
D-Pak  
AUIRFR1010Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
91  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
65  
A
@ T = 25°C  
C
42  
360  
140  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.9  
± 20  
W/°C  
V
V
GS  
Single Pulse Avalanche Energy (Thermally limited)  
EAS  
110  
220  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
300  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.11  
40  
Units  
Junction-to-Case  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/16/11  
1234567...13

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AUIRFR1010Z 替代型号

型号 品牌 替代类型 描述 数据表
IRFR1010ZTRPBF INFINEON

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