5秒后页面跳转
捷配首页

Datasheet > AUIRFP4568
AUIRFP4568 PDF预览

AUIRFP4568

更新时间： 2024-11-05 20:07:11
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 391K
描述
Power Field-Effect Transistor

阅读下载

中文翻译

获取价格

AUIRFP4568 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：2.26
其他特性：ULTRA LOW RESISTANCE雪崩能效等级（Eas）：763 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：150 V
最大漏极电流 (ID)：171 A最大漏源导通电阻：0.0059 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：684 A
参考标准：AEC-Q101表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFP4568 数据手册

 浏览型号AUIRFP4568的Datasheet PDF文件第2页浏览型号AUIRFP4568的Datasheet PDF文件第3页浏览型号AUIRFP4568的Datasheet PDF文件第4页浏览型号AUIRFP4568的Datasheet PDF文件第5页浏览型号AUIRFP4568的Datasheet PDF文件第6页浏览型号AUIRFP4568的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRFP4568  
AUIRFP4568-E  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
l
Advanced Process Technology  
UltraLowOn-Resistance  
Dynamic dv/dt Rating  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
D
VDSS  
150V  
RDS(on) typ.  
max.  
4.8m  
5.9m  
Ω
Ω
G
S
ID  
171A  
D
Description  
D
SpecificallydesignedforAutomotiveapplications,thisHEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieveextremelylowon-resistancepersiliconarea. Additional  
features of this design are a 175°C junction operating  
temperature, fast switching speed and improved repetitive  
avalanche rating . These features combine to make this design  
an extremely efficient and reliable device for use in Automotive  
S
S
D
D
G
G
TO-247AC  
TO-247AD  
AUIRFP4568  
AUIRFP4568-E  
applications and a wide variety of other applications.  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
171  
121  
684  
517  
3.45  
± 30  
Units  
A
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
763  
mJ  
A
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
dv/dt  
TJ  
mJ  
18.5  
Peak Diode Recovery  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
10lbf in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.29  
–––  
40  
Units  
Rθ  
JC  
Rθ  
CS  
Rθ  
JA  
Junction-to-Case  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
0.24  
–––  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
February 17, 2014  
1
1234567...12

中文翻译

下载PDF

AUIRFP4568 替代型号

型号 品牌 替代类型 描述 数据表
IRFP4568PBF INFINEON

类似代替

 HEXFETPower MOSFET

与AUIRFP4568相关器件

型号 品牌 获取价格 描述 数据表
AUIRFR024N INFINEON

获取价格

 		Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR024NTR INFINEON

获取价格

 		Advanced Planar Technology
AUIRFR024NTRL INFINEON

获取价格

 		Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR024NTRR INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFR1010Z INFINEON

获取价格

 		Advanced Process Technology
AUIRFR1010Z KERSEMI

获取价格

 		Advanced Process Technology
AUIRFR1010ZTR INFINEON

获取价格

 		Advanced Process Technology
AUIRFR1010ZTRL INFINEON

获取价格

 		Advanced Process Technology
AUIRFR1010ZTRR INFINEON

获取价格

 		Advanced Process Technology
AUIRFR1018E INFINEON

获取价格

 		Advanced Process Technology Ultra Low On-Resistance

与AUIRFP4568相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证