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AUIRFR1018E PDF预览

AUIRFR1018E

更新时间： 2024-11-06 01:09:19
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 239K
描述
Advanced Process Technology Ultra Low On-Resistance

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中文翻译

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AUIRFR1018E 数据手册

 浏览型号AUIRFR1018E的Datasheet PDF文件第2页浏览型号AUIRFR1018E的Datasheet PDF文件第3页浏览型号AUIRFR1018E的Datasheet PDF文件第4页浏览型号AUIRFR1018E的Datasheet PDF文件第5页浏览型号AUIRFR1018E的Datasheet PDF文件第6页浏览型号AUIRFR1018E的Datasheet PDF文件第7页 
PD - 97685  
AUTOMOTIVE GRADE  
AUIRFR1018E  
HEXFET® Power MOSFET  
Features  
D
S
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
60V  
7.1m  
8.4m  
79A  
●
●
●
●
●
●
●
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
G
56A  
D
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtemperature,fastswitching  
speed and improved repetitive avalanche rating . These features  
combine to make this design an extremely efficient and reliable  
device for use in Automotive applications and a wide variety of other  
S
G
D-Pak  
AUIRFR1018E  
applications.  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
Pulsed Drain Current  
79  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
56  
A
56  
315  
PD @TC = 25°C  
W
110  
Maximum Power Dissipation  
0.76  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally limited)  
88  
mJ  
A
Avalanche Current  
47  
Repetitive Avalanche Energy  
EAR  
mJ  
11  
21  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.32  
50  
Units  
Rθ  
Junction-to-Case  
JC  
RθJA  
°C/W  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
RθJA  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/17/11  
1234567...12

中文翻译

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AUIRFR1018E 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR1018ETRL INFINEON

类似代替

 Advanced Process Technology Ultra Low On-Resistance
IRFR1018ETRPBF INFINEON

类似代替

 Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me
IRFR1018EPBF INFINEON

类似代替

 HEXFET TM Power MOSFET

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 		Advanced Process Technology Ultra Low On-Resistance
AUIRFR1018ETRR INFINEON

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AUIRFR120Z INFINEON

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AUIRFR120ZTRL INFINEON

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 		Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2307Z KERSEMI

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 		Advanced Process Technology
AUIRFR2307Z INFINEON

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AUIRFR2307ZTR INFINEON

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AUIRFR2307ZTRL INFINEON

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 		HEXFET® Power MOSFET
AUIRFR2307ZTRR INFINEON

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