Datasheet > AUIRFR024NTR

AUIRFR024NTR

更新时间： 2024-11-06 01:17:15

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
13页	385K
描述
Advanced Planar Technology

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中文翻译

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数据手册

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AUIRFR024NTR 数据手册

PD - 96355

AUTOMOTIVE GRADE

AUIRFR024N

AUIRFU024N

HEXFET^®Power MOSFET

Features

AdvancedPlanarTechnology

LowOn-Resistance

Dynamic dV/dT Rating

175°COperatingTemperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

V_(BR)DSS

55V

R_DS(on)max.

I_D

0.075

17A

Ω

Lead-Free,RoHSCompliant

Automotive Qualified *

Description

Specifically designed for Automotive applications, this

Cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistancepersiliconarea.Thisbenefitcombinedwiththe

fast switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in Automotive and a wide variety of other

applications.

I-Pak

D-Pak

AUIRFR024N

AUIRFU024N

Gate

Drain

Source

Absolute Maximum Ratings

Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

@ T = 25°C

@ T = 100°C

Power Dissipation

W/°C

@T = 25°C

0.3

Linear Derating Factor

± 20

Gate-to-Source Voltage

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

4.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

STG

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

3.3

Units

R_θJC

R_θJA

Junction-to-Case

–––

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

02/22/11

12 3 4 5 6 7...13

中文翻译

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与AUIRFR024NTR相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR024NTRL	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR024NTRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFR1010Z	INFINEON	获取价格	Advanced Process Technology
AUIRFR1010Z	KERSEMI	获取价格	Advanced Process Technology
AUIRFR1010ZTR	INFINEON	获取价格	Advanced Process Technology
AUIRFR1010ZTRL	INFINEON	获取价格	Advanced Process Technology
AUIRFR1010ZTRR	INFINEON	获取价格	Advanced Process Technology
AUIRFR1018E	INFINEON	获取价格	Advanced Process Technology Ultra Low On-Resistance
AUIRFR1018ETR	INFINEON	获取价格	Advanced Process Technology Ultra Low On-Resistance
AUIRFR1018ETRL	INFINEON	获取价格	Advanced Process Technology Ultra Low On-Resistance

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