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AUIRFP4409

更新时间： 2024-11-05 19:52:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 381K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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AUIRFP4409 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：16 weeks风险等级：5.35
配置：Single最大漏极电流 (Abs) (ID)：38 A
FET 技术：METAL-OXIDE SEMICONDUCTOR最高工作温度：175 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：341 W子类别：FET General Purpose Power
表面贴装：NO处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

AUIRFP4409 数据手册

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AUTOMOTIVE GRADE  
AUIRFP4409  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
Low On-Resistance  
VDSS  
300V  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
56m  
69m  
max  
ID  
38A  
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFETs utilizes the latest processing techniques to  
achieve low on-resistance per silicon area. This benefit com-  
bined with the fast switching speed and ruggedized device de-  
sign that HEXFET power MOSFETs are well known for, provides  
the designer with an extremely efficient and reliable device for  
use in Automotive and a wide variety of other applications.  
S
D
G
TO-247AC  
G
D
S
Gate  
Drain  
Source  
Ordering Information  
Standard Pack  
Form  
Complete Part Number  
Base part number Package Type  
Quantity  
AUIRFP4409  
TO-247AC  
Tube  
25  
AUIRFP4409  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-  
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
38  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
27  
A
152  
341  
2.3  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
VGS  
Gate-to-Source Voltage  
± 20  
541  
EAS (Thermally limited)  
Single Pulse Avalanche Energy   
mJ  
TJ  
TSTG  
Operating Junction and  
-55 to + 175  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
Mounting Torque, 6-32 or M3 Screw  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Junction-to-Case   
Typ.  
–––  
0.24  
–––  
Max.  
0.44  
–––  
40  
Units  
RJC  
RCS  
RJA  
Case-to-Sink, Flat Greased Surface  
°C/W  
Junction-to-Ambient   
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
July 10, 2013  
1234567...9

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