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AUIRFR024NTRR

更新时间： 2024-09-28 14:32:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 379K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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AUIRFR024NTRR 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
风险等级：5.75Is Samacsys：N
配置：Single最大漏极电流 (Abs) (ID)：17 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：175 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：45 W子类别：FET General Purpose Power
表面贴装：YESBase Number Matches：1

AUIRFR024NTRR 数据手册

 浏览型号AUIRFR024NTRR的Datasheet PDF文件第2页浏览型号AUIRFR024NTRR的Datasheet PDF文件第3页浏览型号AUIRFR024NTRR的Datasheet PDF文件第4页浏览型号AUIRFR024NTRR的Datasheet PDF文件第5页浏览型号AUIRFR024NTRR的Datasheet PDF文件第6页浏览型号AUIRFR024NTRR的Datasheet PDF文件第7页 
PD - 96355  
AUTOMOTIVE GRADE  
AUIRFR024N  
AUIRFU024N  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
LowOn-Resistance  
D
S
Dynamic dV/dT Rating  
175°COperatingTemperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
V(BR)DSS  
55V  
RDS(on) max.  
ID  
0.075  
17A  
Ω
G
l
l
Lead-Free,RoHSCompliant  
Automotive Qualified *  
D
D
Description  
S
D
Specifically designed for Automotive applications, this  
Cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistancepersiliconarea.Thisbenefitcombinedwiththe  
fast switching speed and ruggedized device design that  
HEXFET power MOSFETs are well known for, provides  
the designer with an extremely efficient and reliable  
device for use in Automotive and a wide variety of other  
applications.  
S
D
G
G
I-Pak  
D-Pak  
AUIRFR024N  
AUIRFU024N  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
17  
Units  
I
I
I
@ T = 25°C  
C
D
D
12  
A
@ T = 100°C  
C
68  
DM  
45  
Power Dissipation  
W
W/°C  
V
P
@T = 25°C  
C
D
0.3  
Linear Derating Factor  
± 20  
V
Gate-to-Source Voltage  
GS  
EAS  
IAR  
71  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
10  
4.5  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
5.0  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
STG  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
3.3  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
50  
°C/W  
**  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
02/22/11  
1234567...13

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 		Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me

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