AUIRFR1010Z
D
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
55V
●
●
●
●
●
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Advanced Process Technology
LowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
5.8m
7.5m
Ω
Ω
G
91A
42A
S
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
D
S
G
D-Pak
AUIRFR1010Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
91
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
I
I
I
@ T = 25°C
C
D
D
D
@ T = 100°C
C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
65
A
@ T = 25°C
C
42
360
140
DM
P
@T = 25°C
Power Dissipation
C
W
D
Linear Derating Factor
Gate-to-Source Voltage
0.9
± 20
W/°C
V
V
GS
Single Pulse Avalanche Energy (Thermally limited)
EAS
110
220
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested )
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
EAR
mJ
T
J
Operating Junction and
-55 to + 175
300
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.11
40
Units
Junction-to-Case
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
www.kersemi.com
1
06/16/11