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AUIRFR2407TR PDF预览

AUIRFR2407TR

更新时间： 2024-01-17 17:54:48
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 296K
描述
HEXFET® Power MOSFET

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中文翻译

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AUIRFR2407TR 数据手册

 浏览型号AUIRFR2407TR的Datasheet PDF文件第2页浏览型号AUIRFR2407TR的Datasheet PDF文件第3页浏览型号AUIRFR2407TR的Datasheet PDF文件第4页浏览型号AUIRFR2407TR的Datasheet PDF文件第5页浏览型号AUIRFR2407TR的Datasheet PDF文件第6页浏览型号AUIRFR2407TR的Datasheet PDF文件第7页 
PD - 97689A  
AUTOMOTIVE GRADE  
AUIRFR2407  
HEXFET® Power MOSFET  
Features  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
D
V(BR)DSS  
75V  
●
Dynamic dV/dT Rating  
RDS(on) typ.  
max  
ID (Silicon Limited)  
21.8m  
Ω
l 175°COperatingTemperature  
l Fast Switching  
l FullyAvalancheRated  
l RepetitiveAvalancheAllowed  
up to Tjmax  
G
26m  
Ω
S
42A  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
D
Description  
S
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
G
D-Pak  
AUIRFR2407  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
42  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V  
@ T = 25°C  
C
I
I
I
D
D
29  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
A
@ T = 100°C  
C
170  
DM  
110  
0.71  
± 20  
Power Dissipation  
@T = 25°C  
C
W
W/°C  
V
P
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
IAR  
130  
25  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
11  
5.0  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
1.4  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
50  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/30/11  
1234567...12

中文翻译

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AUIRFR2407TR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR2407TRL INFINEON

完全替代

 Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Met
IRFR2407TRPBF INFINEON

类似代替

 Advanced Process Technology
IRFR2407PBF INFINEON

类似代替

 HEXFET㈢Power MOSFET

与AUIRFR2407TR相关器件

型号 品牌 获取价格 描述 数据表
AUIRFR2407TRL INFINEON

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 		Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR2407TRR INFINEON

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 		HEXFET® Power MOSFET
AUIRFR2607Z INFINEON

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 		HEXFET® Power MOSFET
AUIRFR2607Z KERSEMI

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 		Advanced Process Technology
AUIRFR2607ZTR INFINEON

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 		HEXFET® Power MOSFET
AUIRFR2607ZTRL INFINEON

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 		Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR2905Z INFINEON

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 		HEXFET® Power MOSFET
AUIRFR2905Z KERSEMI

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 		Advanced Process Technology
AUIRFR2905ZSTRL INFINEON

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 		Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2905ZSTRR INFINEON

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 		Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me

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