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AUIRFR3504ZTR

更新时间： 2024-11-20 06:38:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
13页	269K
描述
HEXFET® Power MOSFET

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中文翻译

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AUIRFR3504ZTR 数据手册

PD - 97492

AUIRFR3504Z

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

Advanced Process Technology

LowOn-Resistance

V_(BR)DSS

40V

9.0m

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

R_DS(on)max.

Ω

I_{D (Silicon Limited)}

I_{D (Package Limited)}

77A

42A

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processingtechniquestoachieveextremelylowon-

resistance per silicon area. Additional features of

thisdesign area175°Cjunctionoperatingtempera-

ture, fast switching speed and improved repetitive

avalancherating.Thesefeaturescombinetomake

thisdesignanextremelyefficientandreliabledevice

foruseinAutomotiveapplicationsandawidevariety

of other applications.

D-Pak

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

@ T = 25°C

@ T = 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

310

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

0.60

± 20

W/°C

E_AS

110

Single Pulse Avalanche Energy (Thermally Limited)

E_AS(tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

E_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

300

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.66

Units

Junction-to-Case

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

04/12/2010

12 3 4 5 6 7...13

中文翻译

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与AUIRFR3504ZTR相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR3504ZTRL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR3504ZTRR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR3607	INFINEON	获取价格	Advanced Process Technology
AUIRFR3607TRL	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR3710Z	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR3710ZTR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR3710ZTRL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR3710ZTRR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR3806	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR3806TR	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me

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