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AUIRFR4105Z PDF预览

AUIRFR4105Z

更新时间： 2024-11-20 12:19:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
14页 323K
描述
HEXFET® Power MOSFET

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中文翻译

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AUIRFR4105Z 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.07Is Samacsys：N
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY雪崩能效等级（Eas）：29 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：30 A
最大漏极电流 (ID)：30 A最大漏源导通电阻：0.0245 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：48 W最大脉冲漏极电流 (IDM)：120 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR4105Z 数据手册

 浏览型号AUIRFR4105Z的Datasheet PDF文件第2页浏览型号AUIRFR4105Z的Datasheet PDF文件第3页浏览型号AUIRFR4105Z的Datasheet PDF文件第4页浏览型号AUIRFR4105Z的Datasheet PDF文件第5页浏览型号AUIRFR4105Z的Datasheet PDF文件第6页浏览型号AUIRFR4105Z的Datasheet PDF文件第7页 
PD - 97544  
AUTOMOTIVE GRADE  
AUIRFR4105Z  
AUIRFU4105Z  
HEXFET® Power MOSFET  
Features  
D
●
●
●
●
●
●
●
Advanced Process Technology  
V(BR)DSS  
RDS(on) max.  
ID  
55V  
24.5m  
30A  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Ω
G
S
Automotive Qualified *  
Description  
D
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive ava-  
lanche rating . These features combine to make this  
design an extremely efficient and reliable device for  
use in Automotive applications and a wide variety of  
other applications.  
S
S
D
G
G
D-Pak  
I-Pak  
AUIRFR4105Z  
AUIRFU4105Z  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
30  
Units  
A
I
I
I
@ T = 25°C  
C
D
D
@ T = 100°C  
C
21  
120  
48  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
0.32  
± 20  
W/°C  
V
V
GS  
Gate-to-Source Voltage  
EAS  
29  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested )  
46  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
mJ  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
°C  
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
300  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
3.12  
50  
Units  
RθJC  
Junction-to-Case  
RθJA  
RθJA  
°C/W  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/23/2010  
1234567...14

中文翻译

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AUIRFR4105Z 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR4105ZTRR INFINEON

完全替代

 HEXFET® Power MOSFET
AUIRFR4105ZTRL INFINEON

完全替代

 HEXFET® Power MOSFET
IRFR4105ZTRPBF INFINEON

类似代替

 Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Me

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