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AUIRFR4615TRR PDF预览

AUIRFR4615TRR

更新时间： 2024-11-20 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 295K
描述
Advanced Process Technology Low On-Resistance

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AUIRFR4615TRR 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.29
Is Samacsys：N其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：109 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：150 V
最大漏极电流 (Abs) (ID)：33 A最大漏极电流 (ID)：33 A
最大漏源导通电阻：0.042 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：144 W
最大脉冲漏极电流 (IDM)：140 A子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR4615TRR 数据手册

 浏览型号AUIRFR4615TRR的Datasheet PDF文件第2页浏览型号AUIRFR4615TRR的Datasheet PDF文件第3页浏览型号AUIRFR4615TRR的Datasheet PDF文件第4页浏览型号AUIRFR4615TRR的Datasheet PDF文件第5页浏览型号AUIRFR4615TRR的Datasheet PDF文件第6页浏览型号AUIRFR4615TRR的Datasheet PDF文件第7页 
PD -96398A  
AUTOMOTIVE GRADE  
AUIRFR4615  
AUIRFU4615  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
Advanced Process Technology  
D
S
LowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
VDSS  
150V  
34m  
42m  
33A  
RDS(on) typ.  
G
max.  
ID  
Description  
D
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniquestoachieveextremelylowon-resistancepersilicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitive avalanche rating . These features combine to make  
thisdesignanextremelyefficientandreliabledeviceforusein  
S
S
D
G
G
DPak  
AUIRFR4615  
IPAK  
AUIRFU4615  
Automotiveapplicationsandawidevarietyofotherapplications.  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.  
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient  
temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
33  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
24  
A
140  
PD @TC = 25°C  
W
144  
Maximum Power Dissipation  
Linear Derating Factor  
0.96  
W/°C  
V
VGS  
± 20  
109  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
38  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300(1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.045  
50  
Units  
Rθ  
Junction-to-Case  
JC  
Rθ  
°C/W  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
JA  
RθJA  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
10/04/11  
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中文翻译

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 		Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR48ZTRL INFINEON

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 		Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR48ZTRR INFINEON

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