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AUIRFR5505TRL PDF预览

AUIRFR5505TRL

更新时间： 2024-11-18 20:09:43
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 521K
描述
Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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AUIRFR5505TRL 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：26 weeks
风险等级：5.15其他特性：AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级（Eas）：150 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：18 A最大漏极电流 (ID)：18 A
最大漏源导通电阻：0.11 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：57 W
最大脉冲漏极电流 (IDM)：64 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFR5505TRL 数据手册

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AUIRFR5505  
AUIRFU5505  
AUTOMOTIVE GRADE  
Features  
VDSS  
RDS(on)  
ID  
-55V  
0.11  
-18A  
Advanced Planar Technology  
Low On-Resistance  
P-Channel  
Dynamic dv/dt Rating  
150°C Operating Temperature  
Fast Switching  
max.  
D
Fully Avalanche Rated  
D
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
S
S
D
G
G
Description  
Specifically designed for Automotive applications, this Cellular  
design of HEXFET® Power MOSFETs utilizes the latest  
processing techniques to achieve low on-resistance per silicon  
area. This benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs are  
well known for, provides the designer with an extremely efficient  
and reliable device for use in Automotive and a wide variety of  
other applications.  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
AUIRFU5505  
Package Type  
I-Pak  
Orderable Part Number  
Quantity  
75  
75  
3000  
AUIRFU5505  
AUIRFR5505  
AUIRFR5505TRL  
Tube  
Tape and Reel Left  
AUIRFR5505  
D-Pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ -10V  
Max.  
-18  
Units  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
-11  
-64  
57  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
0.45  
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
± 20  
150  
Single Pulse Avalanche Energy (Thermally Limited)   
IAR  
Avalanche Current   
-9.6  
5.7  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
-5.0  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
2.2  
Units  
RJC  
RJA  
RJA  
Junction-to-Ambient ( PCB Mount)   
Junction-to-Ambient  
50  
°C/W  
110  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-10-12  
1234567...11

中文翻译

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AUIRFR5505TRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR5505 INFINEON

完全替代

 Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Meta
IRFR5505TRPBF INFINEON

完全替代

 Advanced process Technolgy
IRFR5505PBF INFINEON

类似代替

 Ultra Low On-Resistance

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AUIRFR8401TRL INFINEON

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 		Advanced Process Technology New Ultra Low On-Resistance
AUIRFR8401TRR INFINEON

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 		Advanced Process Technology New Ultra Low On-Resistance

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