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AUIRFS3004TRL

更新时间： 2024-02-21 04:42:49

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	295K
描述
Advanced Process Technology Ultra Low On-Resistance

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中文翻译

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数据手册

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AUIRFS3004TRL 数据手册

PD - 96400A

AUTOMOTIVE GRADE

AUIRFS3004

AUIRFSL3004

HEXFET^®Power MOSFET

40V

Features

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

V_DSS

R_DS(on)typ.

max.

1.4m

1.75m

I_D

340A

(Silicon Limited)

I_D

195A

(Package Limited)

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisdesign area175°C

junctionoperatingtemperature, fastswitchingspeedand

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

D²Pak

AUIRFS3004

TO-262

AUIRFSL3004

wide variety of other applications.

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal

resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(T_A)

is 25°C, unless otherwise specified.

Parameter

Max.

340

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

240

195

1310

Pulsed Drain Current

P_D@T_C= 25°C

380

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

2.5

W/°C

V_GS

± 20

4.4

300

Peak Diode Recovery

Single Pulse Avalanche Energy

dv/dt

E_{AS (Thermally limited)}

V/ns

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

T_J

-55 to + 175

300

Operating Junction and

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.40

Units

R_θJC

Junction-to-Case

°C/W

Junction-to-Ambient (PCB Mount) , D²Pak

R_θJA

–––

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

10/4/11

12 3 4 5 6 7...13

中文翻译

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与AUIRFS3004TRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRFS3004TRR	INFINEON	获取价格	Advanced Process Technology Ultra Low On-Resistance
AUIRFS3006	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M
AUIRFS3006-7P	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3006-7TRL	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3006-7TRR	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3006TRL	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M
AUIRFS3006TRR	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M
AUIRFS3107	INFINEON	获取价格	Advanced Process Technology
AUIRFS3107-7P	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3107-7TRL	INFINEON	获取价格	HEXFETPower MOSFET

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