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AUIRFR9024NTRR

更新时间： 2024-01-25 14:28:49
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 1086K
描述
HEXFET® Power MOSFET

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中文翻译

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AUIRFR9024NTRR 数据手册

 浏览型号AUIRFR9024NTRR的Datasheet PDF文件第2页浏览型号AUIRFR9024NTRR的Datasheet PDF文件第3页浏览型号AUIRFR9024NTRR的Datasheet PDF文件第4页浏览型号AUIRFR9024NTRR的Datasheet PDF文件第5页浏览型号AUIRFR9024NTRR的Datasheet PDF文件第6页浏览型号AUIRFR9024NTRR的Datasheet PDF文件第7页 
PD - 96351  
AUTOMOTIVE GRADE  
AUIRFR9024N  
AUIRFU9024N  
Features  
AdvancedPlanarTechnology  
HEXFET® Power MOSFET  
LowOn-Resistance  
P-Channel  
D
S
l
V(BR)DSS  
-55V  
0.175  
Dynamic dV/dT Rating  
150°COperatingTemperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) max.  
ID  
Ω
G
-11A  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
D
D
Description  
Specifically designed for Automotive applications, this  
Cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistance per silicon area. This benefit combined with  
the fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliable device for use in Automotive and a wide variety  
of other applications.  
S
S
D
G
D
G
I-Pak  
D-Pak  
AUIRFR9024N  
AUIRFU9024N  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
Max.  
-11  
Units  
I
I
I
@ T = 25°C  
C
D
D
-8  
-44  
A
@ T = 100°C  
C
DM  
38  
Power Dissipation  
W
W/°C  
V
P
@T = 25°C  
C
D
0.30  
± 20  
62  
Linear Derating Factor  
Gate-to-Source Voltage  
V
EAS  
IAR  
GS  
Single Pulse Avalanche Energy(Thermally limited)  
Avalanche Current  
mJ  
A
-6.6  
EAR  
dv/dt  
3.8  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
-10  
V/ns  
-55 to + 150  
T
T
J
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
STG  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
3.3  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
50  
°C/W  
**  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
01/19/11  
1234567...13

中文翻译

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AUIRFR9024NTRR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR9024N INFINEON

完全替代

 HEXFET® Power MOSFET
AUIRFR9024NTRL INFINEON

完全替代

 Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRFR9024NTRPBF INFINEON

完全替代

 Advanced Process Technology

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