5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> AUIRFS3004-7TRL
AUIRFS3004-7TRL PDF预览

AUIRFS3004-7TRL

更新时间： 2024-09-27 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 379K
描述
Advanced Process Technology Ultra Low On-Resistance

阅读下载

中文翻译

获取价格

AUIRFS3004-7TRL 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：D2PAK-7Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.24Is Samacsys：N
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY雪崩能效等级（Eas）：290 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：400 A
最大漏极电流 (ID)：240 A最大漏源导通电阻：0.00125 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263CB
JESD-30 代码：R-PSSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：380 W最大脉冲漏极电流 (IDM)：1610 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFS3004-7TRL 数据手册

 浏览型号AUIRFS3004-7TRL的Datasheet PDF文件第2页浏览型号AUIRFS3004-7TRL的Datasheet PDF文件第3页浏览型号AUIRFS3004-7TRL的Datasheet PDF文件第4页浏览型号AUIRFS3004-7TRL的Datasheet PDF文件第5页浏览型号AUIRFS3004-7TRL的Datasheet PDF文件第6页浏览型号AUIRFS3004-7TRL的Datasheet PDF文件第7页 
PD - 97704A  
AUTOMOTIVE GRADE  
AUIRFS3004-7P  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
●
Advanced Process Technology  
D
VDSS  
RDS(on) typ.  
40V  
0.90m  
1.25m  
400A  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
max.  
G
ID  
ID  
(Silicon Limited)  
240A  
S
(Package Limited)  
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
silicon area. Additional features of this design are a 175°C  
junction operating temperature, fast switching speed and  
improved repetitive avalanche rating. These features  
combine to make this design an extremely efficient and  
reliable device for use in Automotive applications such as  
Electric Power Steering, Battery Switch, SMPS and other  
heavy loads.  
D
S
S
S
S
S
G
D2Pak 7 Pin  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
400  
Units  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
280  
240  
1610  
Pulsed Drain Current  
PD @TC = 25°C  
W
380  
Maximum Power Dissipation  
Linear Derating Factor  
2.5  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
290  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally limited)  
mJ  
A
Avalanche Current  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy  
EAR  
mJ  
2.0  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.40  
40  
Units  
°C/W  
RJC  
Junction-to-Case  
RJA  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/29/11  
1234567...12

中文翻译

下载PDF

AUIRFS3004-7TRL 替代型号

型号 品牌 替代类型 描述 数据表
IRFS3004-7PPBF INFINEON

完全替代

 HEXFET Power MOSFET
AUIRFS3004-7P INFINEON

类似代替

 Advanced Process Technology Ultra Low On-Resistance
IRFS3004TRL7PP INFINEON

类似代替

 High Efficiency Synchronous Rectification in SMPS

与AUIRFS3004-7TRL相关器件

型号 品牌 获取价格 描述 数据表
AUIRFS3004-7TRR INFINEON

获取价格

 		Advanced Process Technology Ultra Low On-Resistance
AUIRFS3004TRL INFINEON

获取价格

 		Advanced Process Technology Ultra Low On-Resistance
AUIRFS3004TRR INFINEON

获取价格

 		Advanced Process Technology Ultra Low On-Resistance
AUIRFS3006 INFINEON

获取价格

 		Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M
AUIRFS3006-7P INFINEON

获取价格

 		HEXFETPower MOSFET
AUIRFS3006-7TRL INFINEON

获取价格

 		HEXFETPower MOSFET
AUIRFS3006-7TRR INFINEON

获取价格

 		HEXFETPower MOSFET
AUIRFS3006TRL INFINEON

获取价格

 		Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M
AUIRFS3006TRR INFINEON

获取价格

 		Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M
AUIRFS3107 INFINEON

获取价格

 		Advanced Process Technology

与AUIRFS3004-7TRL相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证