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AUIRFR8405TRL

更新时间： 2024-02-22 02:03:09
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 289K
描述
Advanced Process Technology, New Ultra Low On-Resistance

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中文翻译

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AUIRFR8405TRL 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：1.48配置：Single
最大漏极电流 (Abs) (ID)：100 AFET 技术：METAL-OXIDE SEMICONDUCTOR
湿度敏感等级：1最高工作温度：175 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：163 W子类别：FET General Purpose Power
表面贴装：YES处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

AUIRFR8405TRL 数据手册

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AUIRFR8405  
AUIRFU8405  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
VDSS  
40V  
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
max.  
1.65mΩ  
1.98m  
211A  
Ω
ID  
(Silicon Limited)  
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating. These features  
combine to make this design an extremely efficient and reliable device  
foruseinAutomotiveapplicationsandwidevarietyofotherapplications.  
ID  
100A  
(Package Limited)  
D
S
D
D
S
S
G
D
G
Applications  
G
l
l
l
l
l
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
DC-DC Converter  
D-Pak  
AUIRFR8405  
I-Pak  
AUIRFU8405  
G
Gate  
D
Drain  
S
Source  
Ordering Information  
Base part  
Package Type  
Standard Pack  
Form  
Tube  
Complete Part Number  
Quantity  
75  
2000  
3000  
3000  
AUIRFR8405  
DPak  
AUIRFR8405  
AUIRFR8405TR  
AUIRFR8405TRL  
AUIRFR8405TRR  
AUIRFU8405  
Tape and Reel  
Tape and Reel Left  
Tape and Reel Right  
Tube  
AUIRFU8405  
IPak  
75  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional  
operationofthedeviceattheseoranyotherconditionbeyondthoseindicatedinthespecificationsisnotimplied. Exposuretoabsolute-maximum-ratedconditions  
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
211  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
150  
A
100  
804  
163  
PD @TC = 25°C  
Maximum Power Dissipation  
W
W/°C  
V
1.1  
Linear Derating Factor  
± 20  
VGS  
TJ  
Gate-to-Source Voltage  
-55 to + 175  
Operating Junction and  
°C  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Avalanche Characteristics  
208  
256  
EAS (Thermally limited)  
Single Pulse Avalanche Energy  
mJ  
EAS (tested)  
IAR  
Single Pulse Avalanche Energy Tested Value  
See Fig. 14, 15, 24a, 24b  
A
Avalanche Current  
EAR  
mJ  
Repetitive Avalanche Energy  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
0.92  
50  
Units  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
JC  
JA  
JA  
°C/W  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
110  
HEXFET® isaregisteredtrademarkofInternationalRectifier.  
*Qualificationstandardscanbefoundathttp://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
April 30, 2013  
1234567...13

中文翻译

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AUIRFR8405TRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR8405 INFINEON

完全替代

 Advanced Process Technology, New Ultra Low On-Resistance

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