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AUIRFS3004-7TRR

更新时间： 2024-09-27 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
12页 379K
描述
Advanced Process Technology Ultra Low On-Resistance

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中文翻译

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AUIRFS3004-7TRR 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.11
Is Samacsys：N其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
雪崩能效等级（Eas）：290 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：400 A最大漏极电流 (ID)：240 A
最大漏源导通电阻：0.00125 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263CBJESD-30 代码：R-PSSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：380 W
最大脉冲漏极电流 (IDM)：1610 A子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFS3004-7TRR 数据手册

 浏览型号AUIRFS3004-7TRR的Datasheet PDF文件第2页浏览型号AUIRFS3004-7TRR的Datasheet PDF文件第3页浏览型号AUIRFS3004-7TRR的Datasheet PDF文件第4页浏览型号AUIRFS3004-7TRR的Datasheet PDF文件第5页浏览型号AUIRFS3004-7TRR的Datasheet PDF文件第6页浏览型号AUIRFS3004-7TRR的Datasheet PDF文件第7页 
PD - 97704A  
AUTOMOTIVE GRADE  
AUIRFS3004-7P  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
●
Advanced Process Technology  
D
VDSS  
RDS(on) typ.  
40V  
0.90m  
1.25m  
400A  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
max.  
G
ID  
ID  
(Silicon Limited)  
240A  
S
(Package Limited)  
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
silicon area. Additional features of this design are a 175°C  
junction operating temperature, fast switching speed and  
improved repetitive avalanche rating. These features  
combine to make this design an extremely efficient and  
reliable device for use in Automotive applications such as  
Electric Power Steering, Battery Switch, SMPS and other  
heavy loads.  
D
S
S
S
S
S
G
D2Pak 7 Pin  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
400  
Units  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
280  
240  
1610  
Pulsed Drain Current  
PD @TC = 25°C  
W
380  
Maximum Power Dissipation  
Linear Derating Factor  
2.5  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
290  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally limited)  
mJ  
A
Avalanche Current  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy  
EAR  
mJ  
2.0  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.40  
40  
Units  
°C/W  
RJC  
Junction-to-Case  
RJA  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/29/11  
1234567...12

中文翻译

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AUIRFS3004-7TRR 替代型号

型号 品牌 替代类型 描述 数据表
IRFS3004-7P INFINEON

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