AUIRFS3004-7PTRL

更新时间： 2024-02-07 16:41:03

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数据手册

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AUIRFS3004-7PTRL 数据手册

PD - 97704A

AUTOMOTIVE GRADE

AUIRFS3004-7P

HEXFET^®Power MOSFET

Features

●

Advanced Process Technology

V_DSS

R_DS(on)typ.

40V

0.90m

1.25m

400A

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *



max.

I_D

(Silicon Limited)

240A

(Package Limited)

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications such as

Electric Power Steering, Battery Switch, SMPS and other

heavy loads.

D²Pak 7 Pin

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

400

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

280

240

1610

Pulsed Drain Current

P_D@T_C= 25°C

380

Maximum Power Dissipation

Linear Derating Factor

2.5

W/°C

V_GS

E_AS

I_AR

± 20

290

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

2.0

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.40

Units

°C/W

R_JC

Junction-to-Case

R_JA

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

11/29/11

12 3 4 5 6 7...12

中文翻译

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与AUIRFS3004-7PTRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRFS3004-7PTRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
AUIRFS3004-7TRL	INFINEON	获取价格	Advanced Process Technology Ultra Low On-Resistance
AUIRFS3004-7TRR	INFINEON	获取价格	Advanced Process Technology Ultra Low On-Resistance
AUIRFS3004TRL	INFINEON	获取价格	Advanced Process Technology Ultra Low On-Resistance
AUIRFS3004TRR	INFINEON	获取价格	Advanced Process Technology Ultra Low On-Resistance
AUIRFS3006	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M
AUIRFS3006-7P	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3006-7TRL	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3006-7TRR	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3006TRL	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M

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