AUIRFR8401
AUIRFU8401
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
VDSS
40V
D
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
RDS(on) typ.
3.2m
4.25m
100A
max
G
ID (Silicon Limited)
S
ID (Package Limited)
100A
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFETs utilizes the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other applications.
I-Pak
AUIRFU8401
D-Pak
AUIRFR8401
Applications
G
D
S
Electric Power Steering (EPS)
Battery Switch
Gate
Drain
Source
Start /Stop Micro Hybrid
Heavy Loads
DC-DC Converter
Ordering Information
Standard Pack
Form
Tube
Complete Part Number
Base part number Package Type
Quantity
75
2000
3000
3000
75
AIRFR8401
D-Pak
AUIRFR8401
AUIRFR8401TR
AUIRFR8401TRL
AUIRFR8401TRR
AUIRFU8401
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
AUIRFU8401
I-Pak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Max.
100
71
100
400
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
A
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
79
0.53
± 20
-55 to + 175
W
W/°C
V
VGS
TJ
TSTG
°C
Storage Temperature Range
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
© 2013 International Rectifier
May 06, 2013