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AUIRFR4620TRL PDF预览

AUIRFR4620TRL

更新时间： 2024-01-25 01:48:49
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 241K
描述
Specifically designed for Automotive applications

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中文翻译

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AUIRFR4620TRL 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-252AA
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.13Is Samacsys：N
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY雪崩能效等级（Eas）：113 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：24 A
最大漏极电流 (ID)：24 A最大漏源导通电阻：0.078 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：144 W最大脉冲漏极电流 (IDM)：100 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFR4620TRL 数据手册

 浏览型号AUIRFR4620TRL的Datasheet PDF文件第2页浏览型号AUIRFR4620TRL的Datasheet PDF文件第3页浏览型号AUIRFR4620TRL的Datasheet PDF文件第4页浏览型号AUIRFR4620TRL的Datasheet PDF文件第5页浏览型号AUIRFR4620TRL的Datasheet PDF文件第6页浏览型号AUIRFR4620TRL的Datasheet PDF文件第7页 
PD - 97681  
AUTOMOTIVE GRADE  
AUIRFR4620  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
●
●
●
Advanced Process Technology  
D
S
VDSS  
200V  
64m  
78m  
24A  
Ultra Low On-Resistance  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
G
max.  
ID  
D
Description  
S
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtemperature,fastswitching  
speed and improved repetitive avalanche rating . These features  
combine to make this design an extremely efficient and reliable  
device for use in Automotive applications and a wide variety of other  
G
D-Pak  
AUIRFR4620  
G
Gate  
D
S
applications.  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
24  
Units  
A
ID @ TC = 100°C  
IDM  
17  
100  
PD @TC = 25°C  
W
144  
Maximum Power Dissipation  
Linear Derating Factor  
0.96  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
113  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally limited)  
mJ  
A
Avalanche Current  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
54  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.045  
50  
Units  
RθJC  
Junction-to-Case  
RθJA  
RθJA  
°C/W  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/10/11  
1234567...12

中文翻译

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AUIRFR4620TRL 替代型号

型号 品牌 替代类型 描述 数据表
IRFR4620TRLPBF INFINEON

类似代替

 Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR4620 INFINEON

类似代替

 Specifically designed for Automotive applications
IRFR4620PBF INFINEON

类似代替

 HEXFET Power MOSFET

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