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AUIRFR48ZTR

更新时间： 2024-01-20 02:22:26
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 292K
描述
Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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AUIRFR48ZTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-252AA包装说明：SMALL OUTLINE, R-PSSO-G2
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.16
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：110 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：42 A
最大漏极电流 (ID)：42 A最大漏源导通电阻：0.011 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：91 W最大脉冲漏极电流 (IDM)：250 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFR48ZTR 数据手册

 浏览型号AUIRFR48ZTR的Datasheet PDF文件第2页浏览型号AUIRFR48ZTR的Datasheet PDF文件第3页浏览型号AUIRFR48ZTR的Datasheet PDF文件第4页浏览型号AUIRFR48ZTR的Datasheet PDF文件第5页浏览型号AUIRFR48ZTR的Datasheet PDF文件第6页浏览型号AUIRFR48ZTR的Datasheet PDF文件第7页 
PD - 97586  
AUTOMOTIVE GRADE  
AUIRFR48Z  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
●
●
Advanced Process Technology  
D
V(BR)DSS  
55V  
11m  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
RDS(on) max.  
ID (Silicon Limited)  
ID (Package Limited)  
Ω
G
62A  
42A  
S
Automotive Qualified *  
D
Description  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive ava-  
lanche rating . These features combine to make this  
design an extremely efficient and reliable device for  
use in Automotive applications and a wide variety of  
other applications.  
S
G
D-Pak  
AUIRFR48Z  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Max.  
62  
Units  
(Silicon Limited)  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
44  
A
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
@ T = 25°C  
C
42  
250  
91  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.61  
± 20  
W/°C  
V
V
GS  
EAS  
74  
110  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
EAS (tested )  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
300  
T
STG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.64  
40  
Units  
Junction-to-Case  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
RθJC  
RθJA  
RθJA  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/9/2010  
1234567...13

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