Datasheet > AUIRFR48Z

AUIRFR48Z

更新时间： 2024-11-20 14:47:51

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
11页	670K
描述
Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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技术参数
数据手册
替代型号

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AUIRFR48Z 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	ROHS COMPLIANT, PLASTIC, DPAK-3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	26 weeks
风险等级：	5.14	其他特性：	AVALANCHE RATED, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：	110 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	55 V
最大漏极电流 (Abs) (ID)：	42 A	最大漏极电流 (ID)：	42 A
最大漏源导通电阻：	0.011 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252AA	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	91 W
最大脉冲漏极电流 (IDM)：	250 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

AUIRFR48Z 数据手册

AUTOMOTIVE GRADE

AUIRFR48Z

Features

HEXFET^®Power MOSFET

 Advanced Process Technology

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

V_DSS

55V

R_DS(on)

max.

11m

62A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

42A

Description

Specifically designed for Automotive applications, this HEXFET®

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating temperature,

fast switching speed and improved repetitive avalanche rating .

These features combine to make this design an extremely efficient

and reliable device for use in Automotive applications and a wide

variety of other applications.

D-Pak

AUIRFR48Z

Gate

Drain

Source

Standard Pack

Form

Tube

Base part number

Package Type

Orderable Part Number

Quantity

3000

AUIRFR48Z

AUIRFR48ZTRL

AUIRFR48Z

D-Pak

Tape and Reel Left

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

250

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

0.61

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

± 20

E_AS(Tested)

Single Pulse Avalanche Energy Tested Value 

Avalanche Current 

110

I_AR

See Fig.15,16, 12a, 12b

E_AR

T_J

Repetitive Avalanche Energy 

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

-55 to + 175

300

T_STG

°C

Thermal Resistance

Symbol

Parameter

Junction-to-Case 

Typ.

–––

Max.

1.64

Units

R_JC

R_JA

Junction-to-Ambient ( PCB Mount) 

Junction-to-Ambient

°C/W

110

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-12-1

12 3 4 5 6 7...11

中文翻译

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AUIRFR48Z 替代型号

型号	品牌	替代类型	描述	数据表
IRFR48ZTRPBF	INFINEON	完全替代	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
IRFR48ZTRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
IRFR48ZPBF	INFINEON	类似代替	AUTOMOTIVE MOSFET

与AUIRFR48Z相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR48ZTR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR48ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR48ZTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR5305	INFINEON	获取价格	AUTOMOTIVE MOSFET
AUIRFR5305TR	INFINEON	获取价格	AUTOMOTIVE MOSFET
AUIRFR540Z	INFINEON	获取价格	Automatic Voltage Regulator
AUIRFR540ZTR	INFINEON	获取价格	Automatic Voltage Regulator
AUIRFR540ZTRL	INFINEON	获取价格	Automatic Voltage Regulator
AUIRFR540ZTRR	INFINEON	获取价格	Automatic Voltage Regulator
AUIRFR5410	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Me

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