Datasheet > AUIRFR5410TRR

AUIRFR5410TRR

更新时间： 2024-01-14 22:33:14

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	226K
描述
Advanced Planar Technology

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中文翻译

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数据手册
替代型号

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AUIRFR5410TRR 数据手册

PD - 96344

AUTOMOTIVE GRADE

AUIRFR5410

HEXFET^®Power MOSFET

Features

●

AdvancedPlanarTechnology

●

P-ChannelMOSFET

LowOn-Resistance

Dynamic dV/dT Rating

175°COperatingTemperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to

Tjmax

V_(BR)DSS

-100V

0.205

R_DS(on)max.

I_D



-13A

●

Lead-Free,RoHSCompliant

Automotive Qualified *

Description

SpecificallydesignedforAutomotiveapplications,

this Cellular Planar design of HEXFET® Power

MOSFETsutilizesthelatestprocessingtechniques

toachievelowon-resistancepersiliconarea. This

benefitcombinedwiththefastswitchingspeedand

ruggedized device design that HEXFET power

MOSFETsarewellknownfor,providesthedesigner

with an extremely efficient and reliable device for

use in Automotive and a wide variety of other

applications.

D-Pak

AUIRFR5410

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

-13

Parameter

Units

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-8.2

-52

@ T = 100°C

@T = 25°C Power Dissipation

W/°C

0.53

± 20

Linear Derating Factor

Gate-to-Source Voltage

E_AS

I_AR

194

Single Pulse Avalanche Energy (Thermally Limited)

-8.4

6.3

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

-5.0

V/ns

-55 to + 150

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

1.9

Units

R_JC

R_JA

Junction-to-Case

–––

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

12/06/10

12 3 4 5 6 7...12

中文翻译

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AUIRFR5410TRR 替代型号

型号	品牌	替代类型	描述	数据表
IRFR5410TRRPBF	INFINEON	类似代替	Ultra Low On-Resistance
IRFR5410	INFINEON	类似代替	Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A)

与AUIRFR5410TRR相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR5505	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Meta
AUIRFR5505TR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRFR5505TRL	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Meta
AUIRFR5505TRR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRFR6215	KERSEMI	获取价格	AUTOMOTIVE GRADE
AUIRFR6215	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRFR6215TR	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRFR6215TRL	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRFR6215TRR	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRFR8401	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance

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