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AUIRFR5410TRL PDF预览

AUIRFR5410TRL

更新时间： 2024-02-04 06:47:42
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 309K
描述
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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AUIRFR5410TRL 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-252AA
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.13其他特性：AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级（Eas）：194 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：13 A最大漏极电流 (ID)：13 A
最大漏源导通电阻：0.205 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：66 W
最大脉冲漏极电流 (IDM)：52 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFR5410TRL 数据手册

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AUTOMOTIVE GRADE  
AUIRFR5410  
HEXFET® Power MOSFET  
Features  
Advanced Planar Technology  
P-Channel MOSFET  
Low On-Resistance  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
VDSS  
RDS(on)  
ID  
-100V  
max.  
0.205  
-13A  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
Description  
S
G
Specifically designed for Automotive applications, this Cellular  
Planar design of HEXFET® Power MOSFETs utilizes the latest  
processing techniques to achieve low on-resistance per silicon  
area. This benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs are well  
known for, provides the designer with an extremely efficient and  
reliable device for use in Automotive and a wide variety of other  
applications.  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
75  
3000  
AUIRFR5410  
AUIRFR5410TRL  
AUIRFR5410  
D-Pak  
Tape and Reel Left  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ -10V  
-13  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
-8.2  
-52  
66  
A
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
0.53  
W/°C  
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
194  
V
mJ  
A
IAR  
Avalanche Current   
-8.4  
6.3  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Pead Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
-5.0  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case   
Typ.  
–––  
–––  
–––  
Max.  
1.9  
Units  
RJC  
RJA  
RJA  
Junction-to-Ambient ( PCB Mount)   
Junction-to-Ambient  
50  
°C/W  
110  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-12-2  
1234567...10

中文翻译

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AUIRFR5410TRL 替代型号

型号 品牌 替代类型 描述 数据表
IRFR5410TRLPBF INFINEON

类似代替

 Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Me
IRFR5410TRPBF INFINEON

类似代替

 Ultra Low On-Resistance
IRFR5410PBF INFINEON

类似代替

 HEXFET Power MOSFET

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