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AUIRFR4620TR

更新时间： 2024-09-25 12:29:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
12页	241K
描述
Specifically designed for Automotive applications

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AUIRFR4620TR 数据手册

PD - 97681

AUTOMOTIVE GRADE

AUIRFR4620

HEXFET^®Power MOSFET

Features

●

Advanced Process Technology

V_DSS

200V

64m

78m

24A

Ultra Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

R_DS(on)typ.

max.

I_D

Description

Specifically designed for Automotive applications, this HEXFET^®

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

thisdesign area175°Cjunctionoperatingtemperature,fastswitching

speed and improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety of other

D-Pak

AUIRFR4620

Gate

applications.

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 100°C

I_DM

100

P_D@T_C= 25°C

144

Maximum Power Dissipation

Linear Derating Factor

0.96

W/°C

V_GS

E_AS

I_AR

± 20

113

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.045

Units

R_θJC

Junction-to-Case

R_θJA

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

06/10/11

12 3 4 5 6 7...12

中文翻译

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与AUIRFR4620TR相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR4620TRL	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRFR4620TRR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRFR48Z	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR48ZTR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR48ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR48ZTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR5305	INFINEON	获取价格	AUTOMOTIVE MOSFET
AUIRFR5305TR	INFINEON	获取价格	AUTOMOTIVE MOSFET
AUIRFR540Z	INFINEON	获取价格	Automatic Voltage Regulator
AUIRFR540ZTR	INFINEON	获取价格	Automatic Voltage Regulator

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