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AUIRFR4615TR

更新时间： 2024-11-24 12:53:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
13页	295K
描述
Advanced Process Technology Low On-Resistance

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中文翻译

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数据手册

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AUIRFR4615TR 数据手册

PD -96398A

AUTOMOTIVE GRADE

AUIRFR4615

AUIRFU4615

Features

HEXFET^®Power MOSFET

Advanced Process Technology

LowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

V_DSS

150V

34m

42m

33A

R_DS(on)typ.

max.

I_D

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniquestoachieveextremelylowon-resistancepersilicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating . These features combine to make

thisdesignanextremelyefficientandreliabledeviceforusein

DPak

AUIRFR4615

IPAK

AUIRFU4615

Automotiveapplicationsandawidevarietyofotherapplications.

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.

The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient

temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

140

P_D@T_C= 25°C

144

Maximum Power Dissipation

Linear Derating Factor

0.96

W/°C

V_GS

± 20

109

Gate-to-Source Voltage

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

300(1.6mm from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.045

Units

R_θ

Junction-to-Case

R_θ

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

R_θJA

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

10/04/11

12 3 4 5 6 7...13

中文翻译

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与AUIRFR4615TR相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR4615TRL	INFINEON	获取价格	Advanced Process Technology Low On-Resistance
AUIRFR4615TRR	INFINEON	获取价格	Advanced Process Technology Low On-Resistance
AUIRFR4620	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRFR4620TR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRFR4620TRL	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRFR4620TRR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRFR48Z	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR48ZTR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR48ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR48ZTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met

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