Datasheet > AUIRFR3607TRL

AUIRFR3607TRL

更新时间： 2024-11-20 18:47:51

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
13页	248K
描述
Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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替代型号

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AUIRFR3607TRL 数据手册

PD - 96376

AUIRFR3607

AUIRFU3607

AUTOMOTIVE GRADE

Features

Advanced Process Technology

HEXFET^®Power MOSFET

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

75V

7.34m

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

9.0m

80A

56A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniquestoachieveextremelylowon-resistancepersilicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating . These features combine to make

thisdesignanextremelyefficientandreliabledeviceforusein

Automotiveapplicationsandawidevarietyofotherapplications.

I-Pak

AUIRFU3607

D-Pak

AUIRFR3607

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.

The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient

temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

310

P_D@T_C= 25°C

140

Maximum Power Dissipation

0.96

± 20

120

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

Avalanche Current

I_AR

Repetitive Avalanche Energy

E_AR

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

300(1.6mm from case)

Thermal Resistance

Parameter

Typ.

Max.

1.045

Units

R_θ

–––

Junction-to-Case

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

R_θ

°C/W

R_θJA

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

06/22/11

12 3 4 5 6 7...13

中文翻译

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AUIRFR3607TRL 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFS3607TRR	INFINEON	完全替代	Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
IRFS3607TRLPBF	INFINEON	功能相似	High Efficiency Synchronous Rectification in SMPS
IRFB3607PBF	INFINEON	功能相似	HEXFET Power MOSFET

与AUIRFR3607TRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR3710Z	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR3710ZTR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR3710ZTRL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR3710ZTRR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR3806	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR3806TR	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR3806TRL	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR3806TRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFR4104	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR4104	KERSEMI	获取价格	Advanced Process Technology Ultra Low On-Resistance

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