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AUIRFR3806TRR PDF预览

AUIRFR3806TRR

更新时间： 2024-02-17 01:19:21
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 272K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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AUIRFR3806TRR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-252AA
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.16其他特性：HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：73 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：43 A最大漏极电流 (ID)：43 A
最大漏源导通电阻：0.0158 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：71 W
最大脉冲漏极电流 (IDM)：170 A子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR3806TRR 数据手册

 浏览型号AUIRFR3806TRR的Datasheet PDF文件第2页浏览型号AUIRFR3806TRR的Datasheet PDF文件第3页浏览型号AUIRFR3806TRR的Datasheet PDF文件第4页浏览型号AUIRFR3806TRR的Datasheet PDF文件第5页浏览型号AUIRFR3806TRR的Datasheet PDF文件第6页浏览型号AUIRFR3806TRR的Datasheet PDF文件第7页 
PD - 97644  
AUTOMOTIVE GRADE  
AUIRFR3806  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
●
●
●
Advanced Process Technology  
D
VDSS  
RDS(on) typ.  
max.  
60V  
Ultra Low On-Resistance  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
12.6m  
15.8m  
43A  
Ω
Ω
G
ID  
S
D
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtemperature,fastswitching  
speed and improved repetitive avalanche rating . These features  
combine to make this design an extremely efficient and reliable  
device for use in Automotive applications and a wide variety of other  
S
G
D-Pak  
AUIRFR3806  
G
D
S
applications.  
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
43  
Units  
A
ID @ TC = 100°C  
IDM  
31  
170  
PD @TC = 25°C  
W
71  
Maximum Power Dissipation  
Linear Derating Factor  
0.47  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
Gate-to-Source Voltage  
73  
mJ  
A
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
25  
7.1  
Repetitive Avalanche Energy  
EAR  
mJ  
24  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
2.12  
–––  
62  
Units  
Rθ  
Junction-to-Case  
JC  
Rθ  
0.50  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
CS  
RθJA  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
03/11/11  
1234567...12

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