Datasheet > AUIRFR3806

AUIRFR3806

更新时间： 2024-11-24 20:08:39

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
10页	689K
描述
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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技术参数
数据手册
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AUIRFR3806 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	ROHS COMPLIANT, PLASTIC, DPAK-3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	26 weeks
风险等级：	0.75	其他特性：	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：	73 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	43 A	最大漏极电流 (ID)：	43 A
最大漏源导通电阻：	0.0158 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252AA	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	71 W
最大脉冲漏极电流 (IDM)：	170 A	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

AUIRFR3806 数据手册

AUTOMOTIVE GRADE

AUIRFR3806

HEXFET^®Power MOSFET

Features

 Advanced Process Technology

 Ultra Low On-Resistance

 Dynamic dV/dT Rating

 175°C Operating Temperature

 Fast Switching

V_DSS

R_DS(on)

60V

typ.

max.

12.6m

15.8m

43A

I_D

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

Description

Specifically designed for Automotive applications, this HEXFET®

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating temperature,

fast switching speed and improved repetitive avalanche rating .

These features combine to make this design an extremely efficient

and reliable device for use in Automotive applications and a wide

variety of other applications.

D-Pak

AUIRFR3806

Gate

Drain

Source

Standard Pack

Form

Tube

Base part number

Package Type

Orderable Part Number

Quantity

3000

AUIRFR3806

AUIRFR3806TRL

AUIRFR3806

D-Pak

Tape and Reel Left

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

I_D@ T_C= 25°C

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

Units

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

170

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.47

W/°C

V_GS

E_AS

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy (Thermally Limited) 

I_AR

Avalanche Current 

7.1

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Pead Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Thermal Resistance

Symbol

Parameter

Junction-to-Case 

Typ.

–––

Max.

2.12

Units

R_JC

R_JA

Junction-to-Ambient ( PCB Mount) 

Junction-to-Ambient 

°C/W

110

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-11-23

12 3 4 5 6 7...10

中文翻译

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AUIRFR3806 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFR3806TRL	INFINEON	类似代替	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
IRFR3806TRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
IRFR3806PBF	INFINEON	类似代替	HEXFET Power MOSFET

与AUIRFR3806相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR3806TR	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR3806TRL	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR3806TRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFR4104	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR4104	KERSEMI	获取价格	Advanced Process Technology Ultra Low On-Resistance
AUIRFR4104TR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR4104TRL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR4104TRR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR4105	KERSEMI	获取价格	Advanced Planar Technology
AUIRFR4105	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance

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