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IRFR3806TRPBF PDF预览

IRFR3806TRPBF

更新时间: 2024-01-13 00:14:25
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 508K
描述
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

IRFR3806TRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-252AA
包装说明:LEAD FREE, PLASTIC, DPAK-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.47
雪崩能效等级(Eas):73 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):43 A
最大漏极电流 (ID):43 A最大漏源导通电阻:0.0158 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):71 W最大脉冲漏极电流 (IDM):170 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFR3806TRPBF 数据手册

 浏览型号IRFR3806TRPBF的Datasheet PDF文件第2页浏览型号IRFR3806TRPBF的Datasheet PDF文件第3页浏览型号IRFR3806TRPBF的Datasheet PDF文件第4页浏览型号IRFR3806TRPBF的Datasheet PDF文件第5页浏览型号IRFR3806TRPBF的Datasheet PDF文件第6页浏览型号IRFR3806TRPBF的Datasheet PDF文件第7页 
PD - 97313  
IRFR3806PbF  
IRFU3806PbF  
Applications  
l High Efficiency Synchronous Rectification in  
SMPS  
HEXFET® Power MOSFET  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
D
S
VDSS  
RDS(on) typ.  
max.  
60V  
12.6m  
15.8m  
43A  
G
Benefits  
ID  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche SOA  
D
l Enhanced body diode dV/dt and dI/dt  
Capability  
S
S
D
G
G
D-Pak  
IRFR3806PbF  
I-Pak  
IRFU3806PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current c  
Max.  
43  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
31  
A
170  
PD @TC = 25°C  
71  
W
Maximum Power Dissipation  
Linear Derating Factor  
0.47  
W/°C  
V
VGS  
20  
24  
Gate-to-Source Voltage  
Peak Diode Recovery e  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
Avalanche Characteristics  
Single Pulse Avalanche Energy d  
EAS (Thermally limited)  
73  
25  
mJ  
A
Avalanche Current c  
IAR  
Repetitive Avalanche Energy f  
EAR  
7.1  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
2.12  
–––  
62  
Units  
RθJC  
–––  
0.50  
–––  
Junction-to-Case j  
RθCS  
RθJA  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient ij  
www.irf.com  
1
03/04/08  

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