Datasheet > IRFR3911

IRFR3911

更新时间： 2024-11-24 12:56:31

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
10页	105K
描述
SMPS MOSFET

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中文翻译

获取价格

数据手册

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IRFR3911 数据手册

PD - 94272

IRFR3911

SMPS MOSFET

IRFU3911

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

100V

R_DS(on)max

I_D

14A

0.115Ω

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR3911

I-Pak

IRFU3911

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.5

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.37

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

7.1

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θJA

Junction-to-Case

–––

2.7

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

Notes through ꢀare on page 10

www.irf.com

01/22/02

12 3 4 5 6 7...10

中文翻译

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与IRFR3911相关器件

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IRFR4104	KERSEMI	获取价格	AUTOMOTIVE MOSFET
IRFR4104PBF	KERSEMI	获取价格	Advanced Process Technology
IRFR4104PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) =
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IRFR4104TRL	KERSEMI	获取价格	AUTOMOTIVE GRADE