Datasheet > IRFR4105TR

IRFR4105TR

更新时间： 2024-11-25 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	509K
描述
种类:N-Channel;漏源电压（Vdss）:55V;持续漏极电流（Id）（在25°C时）:27A;Vgs(th)(V):±20;漏源导通电阻:45mΩ@10V

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IRFR4105TR 数据手册

UMW

IRFR4105

55V N-Channel MOSFET

Description

•

Ultra Low On-Resistance

Fast Switching

Fully Avalanche Rated

Lead-Free

•

V_DS(V) = 55V

I_D= 27A (V_GS= 10V)

R_DS(ON)< 45mΩ (V _GS= 10V)

•

Absolute Maximum Ratings

Parameter

Max.

27ꢀ

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

100

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.45

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6.8

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θJA

Junction-to-Case

2.2

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

°C/W

110

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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