Datasheet > IRFR4105TRL

IRFR4105TRL

更新时间： 2024-09-21 20:27:51

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
11页	154K
描述
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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IRFR4105TRL 数据手册

PD - 91302C

IRFR/U4105

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Surface Mount (IRFR4105)

l Straight Lead (IRFU4105)

l Fast Switching

V_DSS= 55V

R_DS(on)= 0.045Ω

l Fully Avalanche Rated

Description

I_D= 27Aꢀ

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

D-PAK

T O -252AA

I-PAK

TO -251AA

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

27ꢀ

100

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.45

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6.8

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.2

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

R_θJA

110

www.irf.com

5/11/98

12 3 4 5 6 7...11

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IRFR4105TRL 替代型号

型号	品牌	替代类型	描述	数据表
IRFR4105TRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Met

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