Datasheet > IRFR4105ZLPBF

IRFR4105ZLPBF

更新时间： 2024-11-25 01:23:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	335K
描述
Advanced Process Technology

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数据手册

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IRFR4105ZLPBF 数据手册

PD - 95374B

IRFR4105ZPbF

IRFU4105ZPbF

HEXFET^®Power MOSFET

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

V_DSS= 55V

R_DS(on)= 24.5mΩ

I_D= 30A

Description

ThisHEXFET^®PowerMOSFETutilizesthelatest

processingtechniquestoachieveextremelylow

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature,fastswitchingspeedandimproved

repetitive avalanche rating. These features

combinetomakethisdesignanextremelyefficient

and reliable device for use in a wide variety of

applications.

I-Pak

IRFU4105ZPbF

D-Pak

IRFR4105ZPbF

Absolute Maximum Ratings

Parameter

Max.

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

120

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.32

± 20

W/°C

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

3.12

Units

R_θ

Junction-to-Case

Junction-to-Ambient (PCB mount)

°C/W

Junction-to-Ambient

110

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

09/27/10

12 3 4 5 6 7...11

中文翻译

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