Datasheet > IRFR4209A

IRFR4209A

更新时间： 2024-11-23 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	87K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.5A I(D) \| TO-252AA

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数据手册

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IRFR4209A 数据手册

IRFR420, IRFU420

Data Sheet

July 1999

File Number 2411.3

2.5A, 500V, 3.000 Ohm, N-Channel Power

MOSFETs

Features

• 2.5A, 500V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

• r

DS(ON)

= 3.000Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17405.

Ordering Information

Symbol

PART NUMBER

IRFR420

IRFU420

PACKAGE

TO-252AA

TO-251AA

BRAND

IRFR420

IRFU420

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in the tape and reel, i.e., IRFR4209A.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

DRAIN (FLANGE)

DRAIN

SOURCE

IRFR420, IRFU420 Rev. A

12 3 4 5 6 7

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