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IRFR420A PDF预览

IRFR420A

更新时间: 2024-11-23 21:54:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
10页 115K
描述
SMPS MOSFET

IRFR420A 数据手册

 浏览型号IRFR420A的Datasheet PDF文件第2页浏览型号IRFR420A的Datasheet PDF文件第3页浏览型号IRFR420A的Datasheet PDF文件第4页浏览型号IRFR420A的Datasheet PDF文件第5页浏览型号IRFR420A的Datasheet PDF文件第6页浏览型号IRFR420A的Datasheet PDF文件第7页 
PD - 94355  
SMPS MOSFET  
IRFR420A  
IRFU420A  
HEXFET® Power MOSFET  
Applications  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply  
l High speed power switching  
VDSS  
500V  
RDS(on) max  
ID  
3.0Ω  
3.3A  
Benefits  
l Low Gate Charge Qg results in Simple  
Drive Requirement  
l Improved Gate, Avalanche and dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
l Effective COSS specified (See AN 1001)  
D-Pak  
IRFR420A  
I-Pak  
IRFU420A  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
3.3  
2.1  
10  
A
PD @TC = 25°C  
Power Dissipation  
83  
W
W/°C  
V
Linear Derating Factor  
0.67  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
3.4  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Avalanche Characteristics  
Parameter  
Single Pulse Avalanche Energy‚  
Typ.  
Max.  
Units  
mJ  
EAS  
IAR  
–––  
–––  
–––  
140  
2.5  
5.0  
Avalanche Current  
A
EAR  
Repetitive Avalanche Energy  
mJ  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
1.5  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
–––  
62  
°C/W  
www.irf.com  
1
12/10/01  

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