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IRFR420TRRPBF

更新时间: 2024-02-04 16:06:07
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关
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8页 1884K
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IRFR420TRRPBF 数据手册

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IRFR420, IRFU420, SiHFR420, SiHFU420  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
500  
Available  
• Repetitive Avalanche Rated  
RDS(on) (Ω)  
VGS = 10 V  
3.0  
RoHS*  
COMPLIANT  
• Surface Mount (IRFR420/SiHFR420)  
Qg (Max.) (nC)  
Qgs (nC)  
19  
3.3  
13  
• Straight Lead (IRFU420/SiHFU420)  
• Available in Tape and Reel  
• Fast Switching  
Qgd (nC)  
Configuration  
Single  
D
• Ease of Paralleling  
• Lead (Pb)-free Available  
DPAK  
IPAK  
(TO-252)  
(TO-251)  
DESCRIPTION  
G
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effictiveness.  
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
lead version (IRFU/SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surcace mount applications.  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
DPAK (TO-252)  
DPAK (TO-252)  
IRFR120TRLPbFa  
SiHFR120TL-E3a  
IRFR120TRLa  
IPAK (TO-251)  
IRFU420PbF  
SiHFU420-E3  
IRFU420  
IRFR420PbF  
SiHFR420-E3  
IRFR420  
IRFR420TRPbFa  
SiHFR420T-E3a  
IRFR420TRa  
Lead (Pb)-free  
SnPb  
SiHFR420  
SiHFR420Ta  
SiHFR120TLa  
SiHFU420  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
500  
20  
V
VGS  
T
C = 25 °C  
2.4  
Continuous Drain Current  
VGS at 10 V  
ID  
TC =100°C  
1.5  
A
Pulsed Drain Currenta  
IDM  
8.0  
Linear Derating Factor  
0.33  
0.020  
400  
2.4  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
EAS  
IAR  
mJ  
A
EAR  
4.2  
mJ  
TC = 25 °C  
TA = 25 °C  
42  
PD  
W
2.5  
dV/dt  
3.5  
V/ns  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91275  
S-Pending-Rev. A, 21-Jul-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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