Datasheet > IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

更新时间： 2023-12-06 20:09:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	260K
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Power MOSFET

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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A 数据手册

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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Low gate charge Q_gresults in simple drive

requirement

DPAK

(TO-252)

IPAK

(TO-251)

• Improved gate, avalanche, and dynamic

dV/dt ruggedness

Available

• Fully

characterized

capacitance

and

avalanche voltage and current

• Effective C_ossspecified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

PRODUCT SUMMARY

V_DS(V)

APPLICATIONS

500

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

R_DS(on)(Ω)

V_GS= 10 V

1.7

Q_g(Max.) (nC)

6.5

_gs(nC)

_gd(nC)

Configuration

Single

ORDERING INFORMATION

Package

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free and

halogen-free

SiHFR430A-GE3 SiHFR430ATR-GE3 ^aSiHFR430ATRL-GE3 ^aSiHFR430ATRR-GE3 ^aSiHFU430A-GE3

Lead (Pb)-free

IRFR430APbF

IRFR430ATRPbF^a

IRFR430ATRLPbF^a

IRFU430APbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

5.0

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

3.2

Pulsed drain current ^a

I_DM

Linear derating factor

0.91

130

W/°C

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

Repetitive avalanche energy ^a

Maximum power dissipation

E_AS

I_AR

5.0

E_AR

_C= 25 °C

P_D

110

Peak diode recovery dV/dt ^c

dV/dt

T_J, T_stg

3.0

V/ns

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

-55 to +150

300

°C

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting T_J= 25 °C, L = 11 mH, R_g= 25 Ω, I_AS= 5.0 A (see fig. 12)

c. I_SD≤ 5.0 A, dI/dt ≤ 320 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

S21-0373-Rev. E, 19-Apr-2021

Document Number: 91276

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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