Datasheet > IRFR430ATRRPBFA

IRFR430ATRRPBFA

更新时间： 2024-11-25 00:53:51

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	2678K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFR430ATRRPBFA 数据手册

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

500

Available

R_DS(on)(Ω)

V_GS= 10 V

1.7

RoHS*

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Q_g(Max.) (nC)

6.5

COMPLIANT

_gs(nC)

_gd(nC)

• Fully Characterized Capacitance and Avalanche Voltage

and Current

Configuration

Single

• Effective C_ossSpecified

• Lead (Pb)-free Available

DPAK

IPAK

(TO-252)

(TO-251)

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR430APbF

SiHFR430A-E3

IRFR430A

DPAK (TO-252)

IRFR430ATRPbF^a

SiHFR430AT-E3^a

IRFR430ATR^a

DPAK (TO-252)

IRFR430ATRLPbF^a

SiHFR430ATL-E3^a

IRFR430ATRL^a

SiHFR430ATL^a

DPAK (TO-252)

IRFR430ATRRPbF^a

SiHFR430ATR-E3^a

IRFR430ATRR^a

SiHFR430ATR^a

IPAK (TO-251)

IRFU430APbF

SiHFU430A-E3

IRFU430A

Lead (Pb)-free

SnPb

SiHFR430A

SiHFR430AT^a

SiHFU430A

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

5.0

Continuous Drain Current

V_GSat 10 V

I_D

3.2

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.91

130

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

5.0

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

110

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

3.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 11 mH, R_G= 25 Ω, I_AS= 5.0 A (see fig. 12).

c. I_SD≤ 5.0 A, dI/dt ≤ 320 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

www.kersemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与IRFR430ATRRPBFA相关器件

型号	品牌	获取价格	描述	数据表
IRFR430B	FAIRCHILD	获取价格	500V N-Channel MOSFET
IRFR430BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRFR430BTM	ROCHESTER	获取价格	3.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
IRFR4510	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRFR4510PBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFR4510TRPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFR4615	INFINEON	获取价格	The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers
IRFR4615PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR4615PBF	FREESCALE	获取价格	HEXFETPower MOSFET
IRFR4615TRLPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS