Datasheet > IRFR420, IRFU420, SiHFR420, SiHFU420

IRFR420, IRFU420, SiHFR420, SiHFU420

更新时间： 2024-11-25 14:55:23

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威世 - VISHAY		/
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13页	1243K
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Power MOSFET

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IRFR420, IRFU420, SiHFR420, SiHFU420 数据手册

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IRFR420, IRFU420, SiHFR420, SiHFU420

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

DPAK

(TO-252)

IPAK

(TO-251)

• Repetitive avalanche rated

• Surface-mount (IRFR420, SiHFR420)

• Straight lead (IRFU420, SiHFU420)

• Available in tape and reel

Available

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

DESCRIPTION

PRODUCT SUMMARY

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

V_DS(V)

500

3.0

R_DS(on)(Ω)

V_GS= 10 V

Q_gmax. (nC)

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

_gs(nC)

_gd(nC)

3.3

Configuration

Single

ORDERING INFORMATION

Package

DPAK (TO-252)

SiHFR420TRR-GE3 ^a

IPAK (TO-251)

SiHFU420-GE3

SiHFR420-GE3

IRFR420PbF-BE3

IRFR420PbF

SiHFR420TR-GE3 ^a

IRFR420TRPbF-BE3

IRFR420TRPbF ^a

SiHFR420TRL-GE3 ^a

IRFR420TRLPbF-BE3

IRFR420TRLPbF ^a

Lead (Pb)-free and

halogen-free

Lead (Pb)-free

IRFR420TRRPbF ^a

IRFU420PbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

2.4

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

1.5

Pulsed drain current ^a

I_DM

8.0

Linear derating factor

0.33

0.020

400

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

E_AS

I_AR

2.4

Repetitive avalanche energy ^a

E_AR

4.2

Maximum power dissipation

_C= 25 °C

P_D

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dV/dt ^c

T_A= 25 °C

2.5

dV/dt

3.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 124 mH, R_g= 25 Ω, I_AS= 2.4 A (see fig. 12)

c. I_SD≤ 2.4 A, dI/dt ≤ 50 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0771-Rev. F, 19-Jul-2021

Document Number: 91275

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与IRFR420, IRFU420, SiHFR420, SiHFU420相关器件

型号	品牌	获取价格	描述	数据表
IRFR4209A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.5A I(D) \| TO-252AA
IRFR420A	INFINEON	获取价格	SMPS MOSFET
IRFR420A	VISHAY	获取价格	Power MOSFET
IRFR420A	KERSEMI	获取价格	Power MOSFET
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A	VISHAY	获取价格	Power MOSFET
IRFR420APBF	KERSEMI	获取价格	Power MOSFET
IRFR420APBF	VISHAY	获取价格	Power MOSFET
IRFR420APBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = 500V , RDS(on) m
IRFR420ATRL	INFINEON	获取价格	Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFR420ATRLPBF	VISHAY	获取价格	Power MOSFET

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