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IRFR4105PBF PDF预览

IRFR4105PBF

更新时间: 2024-02-08 00:35:16
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 236K
描述
HEXFET Power MOSFET

IRFR4105PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, DPAK-3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.63其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):29 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):30 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.0245 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):48 W
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR4105PBF 数据手册

 浏览型号IRFR4105PBF的Datasheet PDF文件第2页浏览型号IRFR4105PBF的Datasheet PDF文件第3页浏览型号IRFR4105PBF的Datasheet PDF文件第4页浏览型号IRFR4105PBF的Datasheet PDF文件第5页浏览型号IRFR4105PBF的Datasheet PDF文件第6页浏览型号IRFR4105PBF的Datasheet PDF文件第7页 
PD - 95550A  
IRFR4105PbF  
IRFU4105PbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l Surface Mount (IRFR4105)  
l Straight Lead (IRFU4105)  
l Fast Switching  
D
VDSS = 55V  
l Fully Avalanche Rated  
l Lead-Free  
RDS(on) = 0.045Ω  
G
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve the  
lowest possible on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient device for use in a wide  
variety of applications.  
ID = 27A  
S
The D-PAK is designed for surface mounting using  
vapor phase, infrared, or wave soldering techniques.  
The straight lead version (IRFU series) is for through-  
hole mounting applications. Power dissipation levels  
up to 1.5 watts are possible in typical surface mount  
applications.  
D-PAK  
TO-252AA  
I-PAK  
TO-251AA  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current ‡  
27ꢀ  
19  
A
100  
68  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
0.45  
± 20  
65  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚‡  
Avalanche Current‡  
mJ  
A
16  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy‡  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
6.8  
5.0  
mJ  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
2.2  
Units  
°C/W  
1
RθJC  
RθJA  
Junction-to-Ambient (PCB mount) **  
Junction-to-Ambient  
50  
RθJA  
110  
www.irf.com  
1/7/05  

IRFR4105PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFR4105TRLPBF INFINEON

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