Datasheet > IRFR4104TRR

IRFR4104TRR

更新时间： 2024-11-24 12:46:27

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
12页	5033K
描述
AUTOMOTIVE GRADE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFR4104TRR 数据手册

AUIRFR4104

AUTOMOTIVE GRADE

AUIRFU4104

HEXFET^®Power MOSFET

Features

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

V_(BR)DSS

40V

5.5m

R_DS(on)max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Ω

119A

42A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a

175°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating . These

features combine to make this design an extremely

efficient and reliable device for use in Automotive appli-

cations and a wide variety of other applications.

D-Pak

AUIRFR4104

I-Pak

AUIRFU4104

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

119

Parameter

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

Units

@ T = 25°C

@ T = 100°C

@ T = 25°C

480

140

@T = 25°C Power Dissipation

W/°C

0.95

Linear Derating Factor

± 20

Gate-to-Source Voltage

E_AS

145

310

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θ

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

www.kersemi.com

12 3 4 5 6 7...12

中文翻译

下载PDF

与IRFR4104TRR相关器件

型号	品牌	获取价格	描述	数据表
IRFR4104TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me
IRFR4105	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=2
IRFR4105	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR4105PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR4105PBF	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR4105TR	INFINEON	获取价格	暂无描述
IRFR4105TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:55V;持续漏极电流（Id）（在25°C时
IRFR4105TRL	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRFR4105TRL	KERSEMI	获取价格	Advanced Planar Technology
IRFR4105TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Met

与IRFR4104TRR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR4104TRR

IRFR4104TRR 数据手册

与IRFR4104TRR相关器件

与IRFR4104TRR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR4104TRR

IRFR4104TRR 数据手册

与IRFR4104TRR相关器件

与IRFR4104TRR相关文章

您还可以找

您在本页遇到什么问题？