Datasheet > IRFR4105PBF

IRFR4105PBF

更新时间： 2024-11-24 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
10页	3846K
描述
Ultra Low On-Resistance

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFR4105PBF 数据手册

PD - 95550A

IRFR4105PbF

IRFU4105PbF

HEXFET^®Power MOSFET

^lUltra Low On-Resistance

^lSurface Mount (IRFR4105)

^lStraight Lead (IRFU4105)

^lFast Switching

V_DSS= 55V

^lFully Avalanche Rated

l Lead-Free

R_DS(on)= 0.045Ω

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

I_D= 27Aꢀ

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

D-PAK

TO-252AA

I-PAK

TO-251AA

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

27ꢀ

100

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.45

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6.8

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.2

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

110

www.kersemi.com

1/7/05

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRFR4105PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR4105TR	INFINEON	获取价格	暂无描述
IRFR4105TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:55V;持续漏极电流（Id）（在25°C时
IRFR4105TRL	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRFR4105TRL	KERSEMI	获取价格	Advanced Planar Technology
IRFR4105TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRFR4105TRPBF	INFINEON	获取价格	暂无描述
IRFR4105Z	INFINEON	获取价格	Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)
IRFR4105ZLPBF	INFINEON	获取价格	Advanced Process Technology
IRFR4105ZPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFR4105ZPBF_15	INFINEON	获取价格	Advanced Process Technology