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AUIRFR4104TRL

更新时间： 2024-11-20 06:38:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
14页	307K
描述
HEXFET® Power MOSFET

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AUIRFR4104TRL 数据手册

PD - 97452

AUIRFR4104

AUTOMOTIVE GRADE

AUIRFU4104

HEXFET^®Power MOSFET

Features

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

V_(BR)DSS

40V

5.5m

R_DS(on)max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Ω

119A

42A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a

175°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating . These

features combine to make this design an extremely

efficient and reliable device for use in Automotive appli-

cations and a wide variety of other applications.

D-Pak

AUIRFR4104

I-Pak

AUIRFU4104

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

119

Parameter

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

Units

@ T = 25°C

@ T = 100°C

@ T = 25°C

480

140

@T = 25°C Power Dissipation

W/°C

0.95

Linear Derating Factor

± 20

Gate-to-Source Voltage

E_AS

_AS(tested )

145

310

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θ

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

02/10/2010

12 3 4 5 6 7...14

中文翻译

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AUIRFR4104TRL 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFR4104TRR	INFINEON	完全替代	HEXFET® Power MOSFET
AUIRFR4104	INFINEON	类似代替	HEXFET® Power MOSFET

与AUIRFR4104TRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR4104TRR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR4105	KERSEMI	获取价格	Advanced Planar Technology
AUIRFR4105	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFR4105_11	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFR4105TR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFR4105TRL	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFR4105TRR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFR4105Z	KERSEMI	获取价格	AUTOMOTIVE GRADE
AUIRFR4105Z	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRFR4105ZTR	INFINEON	获取价格	HEXFETÂ® Power MOSFET

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