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AUIRFR4105Z

更新时间： 2024-02-10 11:04:43
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
12页 4675K
描述
AUTOMOTIVE GRADE

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中文翻译

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AUIRFR4105Z 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.1
Is Samacsys：N其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
雪崩能效等级（Eas）：29 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：30 A最大漏极电流 (ID)：30 A
最大漏源导通电阻：0.0245 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：48 W
最大脉冲漏极电流 (IDM)：120 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFR4105Z 数据手册

 浏览型号AUIRFR4105Z的Datasheet PDF文件第2页浏览型号AUIRFR4105Z的Datasheet PDF文件第3页浏览型号AUIRFR4105Z的Datasheet PDF文件第4页浏览型号AUIRFR4105Z的Datasheet PDF文件第5页浏览型号AUIRFR4105Z的Datasheet PDF文件第6页浏览型号AUIRFR4105Z的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRFR4105Z  
AUIRFU4105Z  
Features  
D
●
●
●
●
●
●
●
Advanced Process Technology  
V(BR)DSS  
55V  
24.5m  
30A  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
RDS(on) max.  
ID  
Ω
G
S
Automotive Qualified *  
Description  
D
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive ava-  
lanche rating . These features combine to make this  
design an extremely efficient and reliable device for  
use in Automotive applications and a wide variety of  
other applications.  
S
S
D
G
G
D-Pak  
I-Pak  
AUIRFR4105Z  
AUIRFU4105Z  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
30  
Units  
A
I
I
I
@ T = 25°C  
C
D
D
@ T = 100°C  
C
21  
120  
48  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
0.32  
± 20  
W/°C  
V
V
GS  
Gate-to-Source Voltage  
EAS  
29  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested )  
46  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
mJ  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
°C  
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
300  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
3.12  
50  
Units  
RθJC  
Junction-to-Case  
RθJA  
RθJA  
°C/W  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
110  
www.kersemi.com  
1
07/23/2010  
1234567...12

中文翻译

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