Datasheet > AUIRFR4105_11

AUIRFR4105_11

更新时间： 2024-11-24 12:30:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	244K
描述
Advanced Planar Technology Low On-Resistance

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中文翻译

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数据手册

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AUIRFR4105_11 数据手册

PD - 97597A

AUTOMOTIVEGRADE

AUIRFR4105

HEXFET^®Power MOSFET

Features

V_(BR)DSS

55V

●

AdvancedPlanarTechnology

LowOn-Resistance

R_DS(on)max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

45m

27A

Dynamic dV/dT Rating

175°COperatingTemperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed

up toTjmax

20A

●

Lead-Free,RoHSCompliant

Automotive Qualified *

Description

D-Pak

AUIRFR4105

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@ T = 25°C

100

@T = 25°C Power Dissipation

W/°C

0.45

Linear Derating Factor

± 20

Gate-to-Source Voltage

E_AS

I_AR

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

6.8

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

5.0

-55 to + 175

Operating Junction and

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

2.2

Units

R_θ

Junction-to-Case

–––

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

07/05/11

12 3 4 5 6 7...12

中文翻译

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与AUIRFR4105_11相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR4105TR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFR4105TRL	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFR4105TRR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFR4105Z	KERSEMI	获取价格	AUTOMOTIVE GRADE
AUIRFR4105Z	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRFR4105ZTR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRFR4105ZTRL	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRFR4105ZTRR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRFR4292	INFINEON	获取价格	Advanced Process Technology
AUIRFR4292TR	INFINEON	获取价格	Advanced Process Technology

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