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AUIRFR4105TRR PDF预览

AUIRFR4105TRR

更新时间： 2024-11-24 12:30:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 244K
描述
Advanced Planar Technology Low On-Resistance

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中文翻译

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AUIRFR4105TRR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.1
其他特性：AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级（Eas）：65 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：20 A
最大漏极电流 (ID)：20 A最大漏源导通电阻：0.045 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：68 W最大脉冲漏极电流 (IDM)：100 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR4105TRR 数据手册

 浏览型号AUIRFR4105TRR的Datasheet PDF文件第2页浏览型号AUIRFR4105TRR的Datasheet PDF文件第3页浏览型号AUIRFR4105TRR的Datasheet PDF文件第4页浏览型号AUIRFR4105TRR的Datasheet PDF文件第5页浏览型号AUIRFR4105TRR的Datasheet PDF文件第6页浏览型号AUIRFR4105TRR的Datasheet PDF文件第7页 
PD - 97597A  
AUTOMOTIVEGRADE  
AUIRFR4105  
HEXFET® Power MOSFET  
Features  
D
V(BR)DSS  
55V  
●
●
●
●
●
●
●
AdvancedPlanarTechnology  
LowOn-Resistance  
RDS(on) max.  
ID (Silicon Limited)  
ID (Package Limited)  
45m  
27A  
Ω
Dynamic dV/dT Rating  
175°COperatingTemperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed  
up toTjmax  
G
20A  
S
●
●
Lead-Free,RoHSCompliant  
Automotive Qualified *  
D
S
Description  
G
D-Pak  
AUIRFR4105  
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
27  
I
I
I
I
@ T = 25°C  
C
D
D
D
19  
@ T = 100°C  
A
C
20  
@ T = 25°C  
C
100  
DM  
68  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
0.45  
Linear Derating Factor  
± 20  
Gate-to-Source Voltage  
V
GS  
EAS  
IAR  
65  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
16  
6.8  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
5.0  
-55 to + 175  
T
T
Operating Junction and  
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
2.2  
Units  
Rθ  
JC  
Rθ  
JA  
Rθ  
JA  
Junction-to-Case  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount) **  
Junction-to-Ambient  
50  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/05/11  
1234567...12

中文翻译

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