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AUIRFR3806TRL PDF预览

AUIRFR3806TRL

更新时间： 2024-02-21 12:09:26
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 689K
描述
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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AUIRFR3806TRL 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-252AA
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.14其他特性：HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：73 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：43 A最大漏极电流 (ID)：43 A
最大漏源导通电阻：0.0158 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：71 W
最大脉冲漏极电流 (IDM)：170 A子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR3806TRL 数据手册

 浏览型号AUIRFR3806TRL的Datasheet PDF文件第2页浏览型号AUIRFR3806TRL的Datasheet PDF文件第3页浏览型号AUIRFR3806TRL的Datasheet PDF文件第4页浏览型号AUIRFR3806TRL的Datasheet PDF文件第5页浏览型号AUIRFR3806TRL的Datasheet PDF文件第6页浏览型号AUIRFR3806TRL的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRFR3806  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
VDSS  
RDS(on)  
60V  
typ.  
max.  
12.6m  
15.8m  
43A  
ID  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
Description  
S
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieve extremely low on-resistance per silicon area. Additional  
features of this design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive avalanche rating .  
These features combine to make this design an extremely efficient  
and reliable device for use in Automotive applications and a wide  
variety of other applications.  
G
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
75  
3000  
AUIRFR3806  
AUIRFR3806TRL  
AUIRFR3806  
D-Pak  
Tape and Reel Left  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
43  
Units  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
31  
170  
71  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
0.47  
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
± 20  
73  
Single Pulse Avalanche Energy (Thermally Limited)   
IAR  
Avalanche Current   
25  
7.1  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Pead Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
24  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case   
Typ.  
–––  
–––  
–––  
Max.  
2.12  
Units  
RJC  
RJA  
RJA  
Junction-to-Ambient ( PCB Mount)   
Junction-to-Ambient   
50  
°C/W  
110  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-11-23  
1234567...10

中文翻译

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AUIRFR3806TRL 替代型号

型号 品牌 替代类型 描述 数据表
IRFR3806PBF INFINEON

完全替代

 HEXFET Power MOSFET
AUIRFR3806 INFINEON

类似代替

 Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
IRFR3806TRPBF INFINEON

类似代替

 Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me

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