Datasheet > AUIRFR3806TR

AUIRFR3806TR

更新时间： 2024-11-24 19:33:39

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
12页	272K
描述
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AUIRFR3806TR 数据手册

PD - 97644

AUTOMOTIVE GRADE

AUIRFR3806

HEXFET^®Power MOSFET

Features

●

Advanced Process Technology

V_DSS

R_DS(on)typ.

max.

60V

Ultra Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

12.6m

15.8m

43A

I_D

Description

Specifically designed for Automotive applications, this HEXFET^®

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

thisdesign area175°Cjunctionoperatingtemperature,fastswitching

speed and improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety of other

D-Pak

AUIRFR3806

applications.

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 100°C

I_DM

170

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.47

W/°C

V_GS

E_AS

I_AR

± 20

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

7.1

Repetitive Avalanche Energy

E_AR

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

2.12

–––

Units

R_θ

Junction-to-Case

R_θ

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

R_θJA

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

03/11/11

12 3 4 5 6 7...12

中文翻译

下载PDF

与AUIRFR3806TR相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR3806TRL	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR3806TRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFR4104	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR4104	KERSEMI	获取价格	Advanced Process Technology Ultra Low On-Resistance
AUIRFR4104TR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR4104TRL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR4104TRR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR4105	KERSEMI	获取价格	Advanced Planar Technology
AUIRFR4105	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFR4105_11	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance

与AUIRFR3806TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRFR3806TR

AUIRFR3806TR 数据手册

与AUIRFR3806TR相关器件

与AUIRFR3806TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRFR3806TR

AUIRFR3806TR 数据手册

与AUIRFR3806TR相关器件

与AUIRFR3806TR相关文章

您还可以找

您在本页遇到什么问题？